About Spin Memory
Spin Memory develops SOT-MRAM, a type of magnetic memory that stores bits using the spin of electrons rather than electric charge. Spin-orbit torque (SOT) writes data by passing current along a separate path beside the magnetic cell, which is intended to allow fast switching and longer endurance than earlier magnetic designs. Magnetic memory keeps its contents without power and can serve as embedded cache. The company is listed in Fremont, California and 2011 as its founding year. Neither detail, nor its current products and status, could be confirmed from a primary source during checking.
Spin Memory was founded in 2011 and is based in Fremont, CA, United States. It is listed under Spintronics & MRAM, Memory & Storage.
Compute Technologies
- Spintronics & MRAM
What Spin Memory works on
Spintronics & MRAM
Spintronics uses the spin of electrons, a quantum property that acts like a tiny magnet, as well as their charge to store and process information. The best-known product is MRAM, magnetoresistive random-access memory.
Memory & Storage
Memory and storage hold the data that processors work on. Memory such as DRAM is fast and loses its contents when power is removed. Storage such as flash (NAND) is slower, cheaper per bit and keeps data without power.
Also in United States
Numem, Avalanche Technology, Everspin Technologies, NVE Corporation, ANAFLASH
